Granted Patent
Utility
US 5,814,537 · App. 08/768,647
Method of forming transistor electrodes from directionally deposited silicide
Inventors:
Jer-Shen Maa, Sheng Teng Hsu
Patented Case
View Patent ↗
Granted: Sep 29, 1998
Filed: Dec 18, 1996
Inventors
Jer-Shen Maa
Sheng Teng Hsu
Assignees (at issue)
Sharp Microelectronics Technology Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.