Granted Patent
Utility
US 5,817,547 · App. 08/607,641
Method for fabricating a metal oxide semiconductor field effect transistor having a multi-layered gate electrode
Inventor:
Gum Yong Eom
Patented Case
View Patent ↗
Granted: Oct 6, 1998
Filed: Feb 27, 1996
Inventor
Gum Yong Eom
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.