Granted Patent
Utility
US 5,818,082 · App. 08/610,688
E.sup.2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof
Inventors:
Hsingya Arthur Wang, Jein-Chen Young, Darlene Hamilton
Patented Case
View Patent ↗
Granted: Oct 6, 1998
Filed: Mar 4, 1996
Inventors
Hsingya Arthur Wang
Jein-Chen Young
Darlene Hamilton
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.