IP Library › Granted Patent US 5,821,152
Granted Patent Utility
US 5,821,152 · App. 08/950,962

Methods of forming hemispherical grained silicon electrodes including multiple temperature steps

Inventors: Chan Hee HAN, Chang-jip Yang, Young-kyou Park, Jae Wook Kim
Patented Case View Patent ↗
Granted: Oct 13, 1998 Filed: Oct 15, 1997
Inventors
Chan Hee HAN
Chang-jip Yang
Young-kyou Park
Jae Wook Kim
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

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Quick Facts
Patent No.
US 5,821,152
App. No.
08/950,962
Filed
1997-10-15
Granted
1998-10-13
Kind
A