Granted Patent
Utility
US 5,830,775 · App. 08/756,782
Raised silicided source/drain electrode formation with reduced substrate silicon consumption
Inventors:
Jer-Shen Maa, Shen Teng Hsu
Patented Case
View Patent ↗
Granted: Nov 3, 1998
Filed: Nov 26, 1996
Inventors
Jer-Shen Maa
Shen Teng Hsu
Assignees (at issue)
Sharp Microelectronics Technology Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.