IP Library Granted Patent US 5,834,071
Granted Patent Utility
US 5,834,071 · App. 08/802,344

Method for forming a thin film transistor

Inventor: Kang-Cheng Lin
Patented Case View Patent ↗
Granted: Nov 10, 1998 Filed: Feb 11, 1997
Inventor
Kang-Cheng Lin
Assignee (at issue)
Industrial Technology Research Institute

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Quick Facts
Patent No.
US 5,834,071
App. No.
08/802,344
Filed
1997-02-11
Granted
1998-11-10
Kind
A