IP Library › Granted Patent US 5,834,810
Granted Patent Utility
US 5,834,810 · App. 08/733,309

Asymmetrical vertical lightly doped drain transistor and method of forming the same

Inventors: J. Neil Schunke, David Zaterka, Thomas Steven Taylor
Patented Case View Patent ↗
Granted: Nov 10, 1998 Filed: Oct 17, 1996
Inventors
J. Neil Schunke
David Zaterka
Thomas Steven Taylor
Assignee (at issue)
Mitsubishi Semiconductor America, Inc.

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Quick Facts
Patent No.
US 5,834,810
App. No.
08/733,309
Filed
1996-10-17
Granted
1998-11-10
Kind
A