Granted Patent
Utility
US 5,837,553 · App. 08/683,599
Method of making high voltage, junction isolation semiconductor device having dual conductivity type buried regions
Inventor:
Lawrence G. Pearce
Patented Case
View Patent ↗
Granted: Nov 17, 1998
Filed: Jul 15, 1996
Inventor
Lawrence G. Pearce
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.