Granted Patent
Utility
US 5,837,597 · App. 08/576,458
Method of manufacturing semiconductor device with shallow impurity layers
Inventor:
Shuichi Saito
Patented Case
View Patent ↗
Granted: Nov 17, 1998
Filed: Dec 21, 1995
Inventor
Shuichi Saito
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.