Granted Patent
Utility
US 5,843,796 · App. 08/526,427
Method of making an insulated gate bipolar transistor with high-energy P+ i m
Inventor:
Donald R. Disney
Patented Case
View Patent ↗
Granted: Dec 1, 1998
Filed: Sep 11, 1995
Inventor
Donald R. Disney
Assignee (at issue)
DELCO ELECTRONICS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.