Granted Patent
Utility
US 5,843,812 · App. 08/946,774
Method of making a PMOSFET in a semiconductor device
Inventor:
Hyunsang Hwang
Patented Case
View Patent ↗
Granted: Dec 1, 1998
Filed: Oct 8, 1997
Inventor
Hyunsang Hwang
Assignee (at issue)
Goldstar Electron Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.