Granted Patent
Utility
US 5,843,846 · App. 08/775,573
Etch process to produce rounded top corners for sub-micron silicon trench applications
Inventors:
Phi L. Nguyen, Ralph A. Schweinfurth
Patented Case
View Patent ↗
Granted: Dec 1, 1998
Filed: Dec 31, 1996
Inventors
Phi L. Nguyen
Ralph A. Schweinfurth
Assignee (at issue)
Intel Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.