Granted Patent
Utility
US 5,844,259 · App. 08/618,350
Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting
Inventors:
Daniel M. Kinzer, Weizuo Zhang
Patented Case
View Patent ↗
Granted: Dec 1, 1998
Filed: Mar 19, 1996
Inventors
Daniel M. Kinzer
Weizuo Zhang
Assignee (at issue)
International Rectifier Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.