IP Library Granted Patent US 5,844,271
Granted Patent Utility
US 5,844,271 · App. 08/517,495

Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate

Inventors: Rakesh Sethi, Wenchi Ting
Patented Case View Patent ↗
Granted: Dec 1, 1998 Filed: Aug 21, 1995
Inventors
Rakesh Sethi
Wenchi Ting
Assignee (at issue)
Cypress Semiconductor Corporation

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Quick Facts
Patent No.
US 5,844,271
App. No.
08/517,495
Filed
1995-08-21
Granted
1998-12-01
Kind
A