Granted Patent
Utility
US 5,844,840 · App. 08/914,543
High voltage NMOS pass gate having supply range, area, and speed advantages
Inventors:
Binh Quang Le, Pau-Ling Chen, Shane Hollmer, Chung-You Hu, Narbeh Derhacobian
Patented Case
View Patent ↗
Granted: Dec 1, 1998
Filed: Aug 19, 1997
Inventors
Binh Quang Le
Pau-Ling Chen
Shane Hollmer
Chung-You Hu
Narbeh Derhacobian
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.