Granted Patent
Utility
US 5,847,438 · App. 08/625,127
Bonded IC substrate with a high breakdown voltage and large current capabilities
Inventors:
Hiroaki Kikuchi, Tomohiro Hamajima
Patented Case
View Patent ↗
Granted: Dec 8, 1998
Filed: Apr 1, 1996
Inventors
Hiroaki Kikuchi
Tomohiro Hamajima
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.