Granted Patent
Utility
US 5,850,360 · App. 08/607,779
High-voltage N-channel MOS transistor and associated manufacturing process
Inventors:
Bruno Vajana, Livio Baldi
Patented Case
View Patent ↗
Granted: Dec 15, 1998
Filed: Feb 27, 1996
Inventors
Bruno Vajana
Livio Baldi
Assignee (at issue)
SGS-Thomson Microelectronics S.A.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.