Granted Patent
Utility
US 5,852,576 · App. 08/944,904
High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
Inventors:
Binh Quang Le, Pau-Ling Chen, Shane Hollmer, Shoichi Kawamura, Michael Chung, Vincent Leung, Masaru Yano
Patented Case
View Patent ↗
Granted: Dec 22, 1998
Filed: Oct 6, 1997
Inventors
Binh Quang Le
Pau-Ling Chen
Shane Hollmer
Shoichi Kawamura
Michael Chung
Vincent Leung
Masaru Yano
Assignees (at issue)
Advanced Micro Devices, Inc.
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.