IP Library › Granted Patent US 5,858,828
Granted Patent Utility
US 5,858,828 · App. 08/801,668

Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor

Inventors: John J. Seliskar, David W. Daniel, Todd A. Randazzo
Patented Case View Patent ↗
Granted: Jan 12, 1999 Filed: Feb 18, 1997
Inventors
John J. Seliskar
David W. Daniel
Todd A. Randazzo
Assignee (at issue)
Symbios, Inc.

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Quick Facts
Patent No.
US 5,858,828
App. No.
08/801,668
Filed
1997-02-18
Granted
1999-01-12
Kind
A