Granted Patent
Utility
US 5,861,059 · App. 08/694,936
Method for selective growth of silicon epitaxial film
Inventor:
Tatsuya Suzuki
Patented Case
View Patent ↗
Granted: Jan 19, 1999
Filed: Aug 9, 1996
Inventor
Tatsuya Suzuki
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.