Granted Patent
Utility
US 5,861,653 · App. 08/644,339
Semiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereof
Inventor:
Hiromitsu Hada
Patented Case
View Patent ↗
Granted: Jan 19, 1999
Filed: May 10, 1996
Inventor
Hiromitsu Hada
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.