Granted Patent
Utility
US 5,869,803 · App. 08/463,962
Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
Inventors:
Takashi Noguchi, Tohru Ogawa, Yuji Ikeda
Patented Case
View Patent ↗
Granted: Feb 9, 1999
Filed: Jun 5, 1995
Inventors
Takashi Noguchi
Tohru Ogawa
Yuji Ikeda
Assignee (at issue)
SONY GROUP CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.