Granted Patent
Utility
US 5,877,082 · App. 08/851,314
Method of manufacturing semiconductor device without plasma damage
Inventors:
Naohiko Kimizuka, Shinya Ito
Patented Case
View Patent ↗
Granted: Mar 2, 1999
Filed: May 5, 1997
Inventors
Naohiko Kimizuka
Shinya Ito
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.