IP Library › Granted Patent US 5,882,532
Granted Patent Utility
US 5,882,532 · App. 08/656,624

Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding

Inventors: Leslie A. Field, Paul Merchant
Patented Case View Patent ↗
Granted: Mar 16, 1999 Filed: May 31, 1996
Inventors
Leslie A. Field
Paul Merchant
Assignee (at issue)
Hewlett-Packard Company, L.P.

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Quick Facts
Patent No.
US 5,882,532
App. No.
08/656,624
Filed
1996-05-31
Granted
1999-03-16
Kind
A