Granted Patent
Utility
US 5,883,003 · App. 08/428,673
Method for producing a semiconductor device comprising a refractory metal silicide layer
Inventor:
Yoshihisa Matsubara
Patented Case
View Patent ↗
Granted: Mar 16, 1999
Filed: Apr 25, 1995
Inventor
Yoshihisa Matsubara
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.