IP Library › Granted Patent US 5,885,859
Granted Patent Utility
US 5,885,859 · App. 08/960,631

Methods of fabricating multi-gate, offset source and drain field effect transistors

Inventors: Min-Koo Han, Byung-Hyuk Min, Cheol Min Park, Keun-Ho Jang, Jae Hong Jun
Patented Case View Patent ↗
Granted: Mar 23, 1999 Filed: Oct 29, 1997
Inventors
Min-Koo Han
Byung-Hyuk Min
Cheol Min Park
Keun-Ho Jang
Jae Hong Jun
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

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Quick Facts
Patent No.
US 5,885,859
App. No.
08/960,631
Filed
1997-10-29
Granted
1999-03-23
Kind
A