Granted Patent
Utility
US 5,885,889 · App. 08/810,852
Process of fabricating semiconductor device having doped polysilicon layer without segregation of dopant impurity
Inventor:
Fumiki Aisou
Patented Case
View Patent ↗
Granted: Mar 23, 1999
Filed: Mar 4, 1997
Inventor
Fumiki Aisou
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.