IP Library Granted Patent US 5,895,939
Granted Patent Utility
US 5,895,939 · App. 09/057,631

Silicon carbide field effect transistor with increased avalanche withstand capability

Inventor: Katsunori Ueno
Patented Case View Patent ↗
Granted: Apr 20, 1999 Filed: Apr 9, 1998
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.

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Quick Facts
Patent No.
US 5,895,939
App. No.
09/057,631
Filed
1998-04-09
Granted
1999-04-20
Kind
A