IP Library › Granted Patent US 5,897,357
Granted Patent Utility
US 5,897,357 · App. 08/717,014

Method of forming a field effect transistor and method of forming CMOS integrated circuitry

Inventors: Jeff Zhiqiang Wu, Sittampalam Yoganathan
Patented Case View Patent ↗
Granted: Apr 27, 1999 Filed: Sep 20, 1996
Inventors
Jeff Zhiqiang Wu
Sittampalam Yoganathan
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 5,897,357
App. No.
08/717,014
Filed
1996-09-20
Granted
1999-04-27
Kind
A