IP Library › Granted Patent US 5,900,663
Granted Patent Utility
US 5,900,663 · App. 09/020,256

Quasi-mesh gate structure for lateral RF MOS devices

Inventors: Joseph H. Johnson, Pablo E. D'Anna
Patented Case View Patent ↗
Granted: May 4, 1999 Filed: Feb 7, 1998
Inventors
Joseph H. Johnson
Pablo E. D'Anna
Assignee (at issue)
XEMOD, Inc.

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Quick Facts
Patent No.
US 5,900,663
App. No.
09/020,256
Filed
1998-02-07
Granted
1999-05-04
Kind
A