Granted Patent
Utility
US 5,902,131 · App. 08/853,527
Dual-level metalization method for integrated circuit ferroelectric devices
Inventors:
George Argos, Jr., Tatsuya Yamazaki
Patented Case
View Patent ↗
Granted: May 11, 1999
Filed: May 9, 1997
Inventors
George Argos, Jr.
Tatsuya Yamazaki
Assignees (at issue)
RAMTRON INTERNATIONAL CORPORATION
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.