IP Library › Granted Patent US 5,907,762
Granted Patent Utility
US 5,907,762 · App. 08/984,789

Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing

Inventors: David R. Evans, Sheng Teng Hsu, Jong-Jan Lee
Patented Case View Patent ↗
Granted: May 25, 1999 Filed: Dec 4, 1997
Inventors
David R. Evans
Sheng Teng Hsu
Jong-Jan Lee
Assignees (at issue)
Sharp Microelectronics Technology Inc.
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 5,907,762
App. No.
08/984,789
Filed
1997-12-04
Granted
1999-05-25
Kind
A