IP Library Granted Patent US 5,908,309
Granted Patent Utility
US 5,908,309 · App. 09/067,861

Fabrication method of semiconductor device with CMOS structure

Inventor: Takeshi Andoh
Patented Case View Patent ↗
Granted: Jun 1, 1999 Filed: Apr 28, 1998
Inventor
Takeshi Andoh
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,908,309
App. No.
09/067,861
Filed
1998-04-28
Granted
1999-06-01
Kind
A