IP Library › Granted Patent US 5,910,019
Granted Patent Utility
US 5,910,019 · App. 08/829,358

Method of producing silicon layer having surface controlled to be uneven or even

Inventors: Hirohito Watanabe, Ichiro Honma
Patented Case View Patent ↗
Granted: Jun 8, 1999 Filed: Apr 2, 1997
Inventors
Hirohito Watanabe
Ichiro Honma
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,910,019
App. No.
08/829,358
Filed
1997-04-02
Granted
1999-06-08
Kind
A