Granted Patent
Utility
US 5,910,669 · App. 07/918,954
Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
Inventors:
Mike F. Chang, Fwu-Iuan Hshieh, Sze-Hon Kwan, King Owyang
Patented Case
View Patent ↗
Granted: Jun 8, 1999
Filed: Jul 24, 1992
Inventors
Mike F. Chang
Fwu-Iuan Hshieh
Sze-Hon Kwan
King Owyang
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.