Granted Patent
Utility
US 5,912,490 · App. 08/905,513
MOSFET having buried shield plate for reduced gate/drain capacitance
Inventors:
Francois Hebert, Daniel Ng
Patented Case
View Patent ↗
Granted: Jun 15, 1999
Filed: Aug 4, 1997
Inventors
Francois Hebert
Daniel Ng
Assignee (at issue)
Spectrian Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.