Granted Patent
Utility
US 5,919,302 · App. 09/057,851
Low defect density vacancy dominated silicon
Inventors:
Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson
Patented Case
View Patent ↗
Granted: Jul 6, 1999
Filed: Apr 9, 1998
Inventors
Robert Falster
Joseph C. Holzer
Steve A. Markgraf
Paolo Mutti
Seamus A. McQuaid
Bayard K. Johnson
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.