Granted Patent
Utility
US 5,922,623 · App. 08/646,967
Hydrogen fluoride vapor phase selective etching method for fabricating semiconductor devices
Inventors:
Hiroaki Tsutsui, Takao Matsumura, Hirokazu Oikawa, Masayuki Yokoi, Junichi Nakamura, Hiroyuki Sato, Jun Mizoe
Patented Case
View Patent ↗
Granted: Jul 13, 1999
Filed: May 8, 1996
Inventors
Hiroaki Tsutsui
Takao Matsumura
Hirokazu Oikawa
Masayuki Yokoi
Junichi Nakamura
Hiroyuki Sato
Jun Mizoe
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.