IP Library › Granted Patent US 5,928,965
Granted Patent Utility
US 5,928,965 · App. 08/909,263

Method for dry-etching of silicon substrate

Inventors: Hideyuki Shoji, Takakazu Kusuki
Patented Case View Patent ↗
Granted: Jul 27, 1999 Filed: Aug 11, 1997
Inventors
Hideyuki Shoji
Takakazu Kusuki
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,928,965
App. No.
08/909,263
Filed
1997-08-11
Granted
1999-07-27
Kind
A