IP Library Granted Patent US 5,929,481
Granted Patent Utility
US 5,929,481 · App. 08/964,419

High density trench DMOS transistor with trench bottom implant

Inventors: Fwu-Iuan Hshieh, Brian H. Floyd, Mike F. Chang, Danny Chi Nim, Daniel Ng
Patented Case View Patent ↗
Granted: Jul 27, 1999 Filed: Nov 4, 1997
Inventors
Fwu-Iuan Hshieh
Brian H. Floyd
Mike F. Chang
Danny Chi Nim
Daniel Ng
Assignee (at issue)
SILICONIX INCORPORATED

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,929,481
App. No.
08/964,419
Filed
1997-11-04
Granted
1999-07-27
Kind
A