Granted Patent
Utility
US 5,930,636 · App. 08/645,361
Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes
Inventors:
Aaron K. Oki, Donald K. Umemoto, Liem T. Tran, Dwight C. Streit
Patented Case
View Patent ↗
Granted: Jul 27, 1999
Filed: May 13, 1996
Inventors
Aaron K. Oki
Donald K. Umemoto
Liem T. Tran
Dwight C. Streit
Assignee (at issue)
TRW Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.