Granted Patent
Utility
US 5,933,716 · App. 08/997,644
Method of making semiconductor device using oblique ion implantation
Inventor:
Shingo Hashimoto
Patented Case
View Patent ↗
Granted: Aug 3, 1999
Filed: Dec 23, 1997
Inventor
Shingo Hashimoto
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.