Granted Patent
Utility
US 5,933,720 · App. 08/840,722
Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor
Inventors:
Hiroaki Yokoyama, Toshio Komuro
Patented Case
View Patent ↗
Granted: Aug 3, 1999
Filed: Apr 25, 1997
Inventors
Hiroaki Yokoyama
Toshio Komuro
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.