Granted Patent
Utility
US 5,933,737 · App. 08/895,260
Buried-channel MOS transistor and process of producing same
Inventor:
Yoshiro Goto
Patented Case
View Patent ↗
Granted: Aug 3, 1999
Filed: Jul 16, 1997
Inventor
Yoshiro Goto
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.