IP Library › Granted Patent US 5,937,302
Granted Patent Utility
US 5,937,302 · App. 08/781,092

Method of forming lightly doped drain region and heavily doping a gate using a single implant step

Inventors: Mark I. Gardner, Frederick N. Hause
Patented Case View Patent ↗
Granted: Aug 10, 1999 Filed: Jan 8, 1997
Inventors
Mark I. Gardner
Frederick N. Hause
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 5,937,302
App. No.
08/781,092
Filed
1997-01-08
Granted
1999-08-10
Kind
A