Granted Patent
Utility
US 5,943,547 · App. 08/926,369
Method of forming highly-integrated thin film capacitor with high dielectric constant layer
Inventors:
Shintaro Yamamichi, Pierre Yves Lesaicherre
Patented Case
View Patent ↗
Granted: Aug 24, 1999
Filed: Sep 9, 1997
Inventors
Shintaro Yamamichi
Pierre Yves Lesaicherre
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.