Granted Patent
Utility
US 5,943,589 · App. 09/015,531
Method of fabricating semiconductor device with a trench isolation
Inventor:
Hiroshi Ogushi
Patented Case
View Patent ↗
Granted: Aug 24, 1999
Filed: Jan 29, 1998
Inventor
Hiroshi Ogushi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.