Granted Patent
Utility
US 5,950,068 · App. 08/705,616
Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics
Inventor:
W. G. Einthoven
Patented Case
View Patent ↗
Granted: Sep 7, 1999
Filed: Aug 30, 1996
Inventor
W. G. Einthoven
Assignee (at issue)
General Instrument Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.