IP Library › Granted Patent US 5,951,879
Granted Patent Utility
US 5,951,879 · App. 08/631,003

Method of etching polysilicon layer

Inventors: Kyoko Miyamoto, Satoshi Nakagawa
Patented Case View Patent ↗
Granted: Sep 14, 1999 Filed: Apr 12, 1996
Inventors
Kyoko Miyamoto
Satoshi Nakagawa
Assignee (at issue)
Matsushita Electronics Corporation

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Quick Facts
Patent No.
US 5,951,879
App. No.
08/631,003
Filed
1996-04-12
Granted
1999-09-14
Kind
A