Granted Patent
Utility
US 5,952,721 · App. 08/812,247
Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer
Inventor:
Shuji Fujiwara
Patented Case
View Patent ↗
Granted: Sep 14, 1999
Filed: Mar 6, 1997
Inventor
Shuji Fujiwara
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.